Morphology transition during low-pressure chemical vapor deposition.

نویسندگان

  • Y P Zhao
  • J T Drotar
  • G C Wang
  • T M Lu
چکیده

Assuming a reemission model, we have studied, in detail, the effect of sticking coefficient on the morphology evolution in low-pressure chemical vapor deposition processes. We have shown that the surface morphology changes from a self-affine fractal to a columnarlike morphology with increasing sticking coefficient, which agrees qualitatively with experimental observations.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hydrodynamic Studies of Fluidized Bed Chemical Vapor Deposition Reactors to Produce Carbon Nano Tubes via Catalytic Decomposition over Co/Pd MgO

The hydrodynamic studies of fluidized bed reactor has been reported in terms of pressure drop, minimum fluidization velocity and bed volume expansion to contribute to the optimization of the CNTs production parameters in fluidized bed reactors. Minimum fluidization velocity and pressure drop, as the most important parameters, were taken into account for the investigation of the hydrodynamic beh...

متن کامل

An atomic-scale analysis of catalytically-assisted chemical vapor deposition of carbon nanotubes

Growth of carbon nanotubes during transition-metal particles catalytically-assisted thermal decomposition (also referred to as chemical vapor deposition or CVD) of methane in hydrogen as a carrier gas has been analyzed at the atomic scale using a kinetic Monte Carlo method. The method is parameterized by the rates of various nanotube surface and edge reactions (e.g. adsorption of hydrocarbons a...

متن کامل

Simulation of morphological instabilities during diamond chemical vapor deposition

The diamond chemical vapor deposition (CVD) process has been investigated theoretically and the morphological instabilities associated with the growth of diamond films have been examined with a model based on the continuum species conservation equation coupled to surface reaction kinetics. A linear stability analysis and numerical calculations have been carried out to determine critical paramet...

متن کامل

Monte Carlo Simulation of Hyperthermal Physical Vapor Deposition

Low-pressure sputtering and ionized vapor deposition processes create atomic fluxes with kinetic energies in the 1.0–20 eV (and above) range. The impact energy of these hyperthermal atoms significantly effects the surface morphology and structure of vapor deposited films. Recent molecular dynamics simulations of metal atom interactions with a metal surface have established the energy and angula...

متن کامل

Chemical vapor deposition of rough-morphology silicon films over a broad temperature range

Growth of rough polycrystalline silicon films has been achieved on SiO, surfaces over a broad temperature range () 100 “C!) using SiH, chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial gr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 87 13  شماره 

صفحات  -

تاریخ انتشار 2001